The KRC-NTC-HfO2 [HfO2(5-25 nm)/SiO2(2 nm)/Si(100)] is composed of 5 thin HfO2 films grown by atomic layer deposition on Si(100) wafers with a surface SiO2 layer of about 2 nm, grown by thermal oxidation.
They can be used to calibrate the parameters for the thickness measurement of nm HfO2 films through certified values.
Specifications of KRC-NTC-HfO2
| Item | Detailed Specifications |
| Nominal thickness | 5, 10, 15, 20, 25 nm |
| Substrate | SiO2(2 nm) / Si(100) wafer |
| Film deposition | Atomic Layer Deposition |
| Certification method | Mutual calibration with TEM and MEIS |
| Traceability | Silicon lattice constant measured by TEM |
MEIS Spectrum
